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| HAL : hal-00512742, version 1 |
| DOI : 10.1016/j.sse.2010.06.004 |
| Fiche détaillée |  Récupérer au format |
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| Solid-State Electronics 54, 11 (2010) 1332-1338 |
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| A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison |
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| Sebastien Fregonese 1Cristell Maneux 1 |
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| (01/11/2010) |
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| This paper presents a versatile compact model dedicated to 1D transistors in order to predict the ultimate performances of nano-device-based circuits. We have developed a thermionic charge model based on the non-parabolic-energy-dispersion-relation NPEDR. The model is valid for both CNTFET and GNRFET. Model results are compared with GNRFET NEGF simulations. Then, GNRFET and CNTFET performances are analysed through two circuit demonstrators such as a ring oscillator circuit and 6T RAM. |
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| 1 : | Laboratoire de l'intégration, du matériau au système (IMS) |
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CNRS : UMR5218 – Université Sciences et Technologies - Bordeaux I – Institut Polytechnique de Bordeaux |
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| Domaine | : | Sciences de l'ingénieur/Electronique |
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| Compact – Modelling – Carbon nanotube – Graphene – Nanoribbon – Transistor – Nanowire – SPICE – Verilog A – Thermionic charge |
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| hal-00512742, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00512742 | |
| oai:hal.archives-ouvertes.fr:hal-00512742 | |
| Contributeur : Chrystel Plumejeau | |
| Soumis le : Mardi 31 Août 2010, 14:46:59 | |
| Dernière modification le : Mardi 31 Août 2010, 14:46:59 | |
