Self-sustained etch masking: a new concept to initiate the formation of nanopatterns during ion erosion

Sébastien Le Roy (1) , Etienne Barthel (1) , Nathalie Brun (2) , Anne Lelarge (1) , Elin Sondergard (1)

1 SVI - Surface du Verre et Interfaces
2 LPS - Laboratoire de Physique des Solides

Materials allowing for rapid and reliable formation of nanopatterned surfaces is an important issue in many areas of science today. Self-organized pattern formation induced by ion erosion is a promising bottom-up approach. In the case of the III-V semiconductors, this method can lead to several remarkable structure types even if the formation mechanism has yet to be found. Through high resolution chemical scanning transmission electron imaging and x-ray photo emission, we show that the capacity of III-V semiconductors to pattern under ion erosion is linked to the phase diagram of these materials. We suggest an original scenario to explain the specific behavior of III-V semiconductors, where one species segregates and acts as a continuously resupplied etching shield. This new concept is at variance with the standard Bradley Harper model and opens new perspectives for bottom up patterning of compound materials.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Sébastien Le Roy, Etienne Barthel, Nathalie Brun, Anne Lelarge, Elin Sondergard. Self-sustained etch masking: a new concept to initiate the formation of nanopatterns during ion erosion. Journal of Applied Physics, 2009, 106 (9), pp.094308. ⟨hal-00499399⟩