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| HAL: hal-00495144, version 1 |
| DOI: 10.1002/pssb.200983818 |
| Detailed view |  Export this paper |
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| phys stat sol (b) 247, 8 (2010) 1858 - 1861 |
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| Compact modeling of optically gated carbon nanotube field effect transistor |
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Si-Yu Liao 1Cristell Maneux 1 |
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| (2010-06-30) |
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| Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG-CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non-volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements. |
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| 1: | Laboratoire de l'intégration, du matériau au système (IMS) |
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CNRS : UMR5218 – Université Sciences et Technologies - Bordeaux I – Ecole Nationale Supérieure d'Electronique, Informatique et Radiocommunications de Bordeaux – École Nationale Supérieure de Chimie et de Physique de Bordeaux |
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| MODEL team, IMS Laboratory, University of Bordeaux 1 |
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| Subject | : | Engineering Sciences/Micro and nanotechnologies/Microelectronics |
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| carbon nanotube – design – field effect transistor – modeling – trapping/detrapping |
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| hal-00495144, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00495144 | |
| oai:hal.archives-ouvertes.fr:hal-00495144 | |
| From: Liao Si-Yu | |
| Submitted on: Friday, 25 June 2010 10:52:55 | |
| Updated on: Tuesday, 27 July 2010 11:13:51 | |
