Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

Jean-Michel Lamy (1) , Christophe Levallois (1) , Abdulhadi Nakkar (1) , Philippe Caroff (1) , Cyril Paranthoen (1) , Olivier Dehaese (1) , Alain Le Corre (1) , Abderrahim Ramdane (2) , Slimane Loualiche (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 LPN - Laboratoire de photonique et de nanostructures

Vertical cavity surface emitting lasers (VCSELs) operating at 1.55-µm are of great interests in optical telecommunication applications. Their circular, spectral and spatial single mode laser beam is essential points for an efficient fiber coupling and high frequency modulation. Moreover, their low-cost production and the possibility to test each laser directly on the wafer represent great advantages for production applications. In contrast with edge emitting lasers, VCSEL present an important polarization instability, which may increase the bit error rate in data transmission. Different solutions have been proposed for controlling the polarization, from patterning the output mirror or by using a birefringent material on top of the mirror, which do complicate the device technology. In this contribution, we propose to use a gain material presenting an important polarization anisotropy like quantum wires in order to fix the polarization of the emitting VCSEL.

Mots clés: VCSEL; semiconductor laser; Bragg mirror; quantum wires; polarization; InP

Domaines: Optique / photonique; Science des matériaux [cond-mat.mtrl-sci]

Jean-Michel Lamy, Christophe Levallois, Abdulhadi Nakkar, Philippe Caroff, Cyril Paranthoen, et al.. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization. Trends in Nanotechnology 2006, Sep 2006, Grenoble, France. p 1-2. ⟨hal-00491366⟩