Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation

Grégory Bidal (1, 2) , Dominique Fleury (1, 2) , Gérard Ghibaudo (1) , Frédéric Boeuf (2) , Thomas Skotnicki (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

This paper reports a new methodology to monitor L-dependent mobility degradation based on empirical modeling of experimental results. This method allows benchmarking the impact on mobility degradation of different technological modules, thus giving some guidelines for device optimization.

Mots clés: mobility degradation; MOSFET; ballisticity; modeling

Domaines: Micro et nanotechnologies/Microélectronique

Grégory Bidal, Dominique Fleury, Gérard Ghibaudo, Frédéric Boeuf, Thomas Skotnicki. Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation. Silicon Nanoelectronics Workshop (SNW), Jun 2009, Kyoto, Japan. pp.25-26. ⟨hal-00465794v2⟩