Series connection of IGBT

The Van Nguyen (1) , Pierre-Olivier Jeannin (1) , Eric Vagnon (1) , David Frey (1) , Jean-Christophe Crébier (1)

1 G2ELab - Laboratoire de Génie Electrique de Grenoble

This article analyzes the effects of parasitic capacitances in the series connection of IGBT, which exist naturally due to gate driver and power circuit geometry. Two solutions, that can be combined, are proposed to minimize these effects in order to achieve a better voltage balancing. The first one is based on gate driver self-powering technique. The second one is based on a vertical structure assembly of IGBT connected in series. The performance offered by these two complementary solutions is investigated and validated on a series connection of three IGBT in a chopper converter. Both simulation and experimental results show the effectiveness of our approaches.

Domaines: Energie électrique

The Van Nguyen, Pierre-Olivier Jeannin, Eric Vagnon, David Frey, Jean-Christophe Crébier. Series connection of IGBT. APEC 2010, Feb 2010, Palm Springs, United States. pp 2238 à 2244. ⟨hal-00461367⟩