%0 Journal Article
%T Effect of holes on the dynamic polarization of nuclei in semiconductors
%+ Groupe d'étude des semiconducteurs (GES)
%+ Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
%A Brunetti, Adalberto
%A Vladimirova, Maria
%A Scalbert, Denis
%A Folliot, Hervé
%A Le Corre, Alain
%< avec comité de lecture
%Z 06-042
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 73
%P 121202
%8 2006
%D 2006
%R 10.1103/PhysRevB.73.121202
%K INP
%K RESONANCE
%K SPIN
%K NMR
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X In semiconductors optically enhanced polarization of nuclei is known to be primarily due to photoexcited electrons. We show that holes play a role in this process via the spin-dependent recombination of the carriers. Our results are obtained in n-type InP where spin-dependent recombination leads to the inversion of the nuclear field direction due to the donor spins cooling under optical excitation.
%G English
%L hal-00440491
%U https://hal.science/hal-00440491
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