%0 Journal Article
%T Spin filtering through a single impurity in a GaAs/AlAs/GaAs resonant tunneling device
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institute of Experimental Physics [Warsaw] (IFD)
%+ Laboratoire de photonique et de nanostructures (LPN)
%+ Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G)
%A Jouault, Benoit
%A Gryglas, Marta
%A Baj, M.
%A Cavanna, Antonella
%A Gennser, Ulf
%A Faini, Giancarlo
%A Maude, Duncan Kennedy
%Z Polonium Grant No. 7041/R07/R08, Project No. DWM/N121/POLONIUM/2008, MTKD-CT-2005-029671, RITA-CT-3003-505474
%< avec comité de lecture
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 79
%P 041307(R)
%8 2009
%D 2009
%R 10.1103/PhysRevB.79.041307
%Z Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]Journal articles
%X The Zeeman splittings of a Si shallow donor in AlAs and of a two-dimensional electron gas (2DEG) in GaAs are evidenced by resonant tunneling spectroscopy in submicrometer GaAs/AlAs/GaAs junctions. In magnetic field, the donor acts as a spin-sensitive probe of the spin-polarized density of states in the emitter. In the current-voltage characteristic the two splittings are resolved, which allows us to estimate the Landé g factors for the impurity gI=+1.96±0.16 and for the 2DEG. Because of spin conservation in the tunneling between the 2DEG and the donor, the relative sign of the two g factors can be determined.
%G English
%L hal-00439962
%U https://hal.science/hal-00439962
%~ UNIV-TLSE3
%~ UGA
%~ CNRS
%~ UNIV-GRENOBLE1
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ LNCMI
%~ UNIV-UT3
%~ UT3-INP
%~ UT3-TOULOUSEINP
%~ UM1-UM2