High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates

Paolo Perna (1) , Laurence Méchin (1) , Marie-Pierre Chauvat (2) , Pierre Ruterana (2) , Ch. Simon (3) , U. Scotti Di Uccio (4)

1 Equipe Electronique - Laboratoire GREYC - UMR6072
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
3 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
4 INFN, Sezione di Napoli - Istituto Nazionale di Fisica Nucleare, Sezione di Napoli

Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namely La0.7Sr0.3MnO3/Bi4Ti3O12/CeO2/YSZ/Si (BTO-based), and La0.7Sr0.3MnO3/SrTiO3/ CeO2 /YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction, transmission electron microscopy, magnetic and transport measurements. The Curie temperature TC of the BTO-based samples was found to be higher (360 K) than for the typical reference epitaxial LSMO film grown on (001) SrTiO3 single crystal (345 K), due to high compressive in-plane strain. The STO-based samples show high structural quality, low roughness and high TC (350 K), making them interesting candidates for use in innovative LSMO-based bolometers or spintronic devices operating at room temperature. (Some figures in this article are in colour only in the electronic version)

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique

Paolo Perna, Laurence Méchin, Marie-Pierre Chauvat, Pierre Ruterana, Ch. Simon, et al.. High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates. Journal of Physics: Condensed Matter, 2009, 21, pp.306005. ⟨hal-00438161⟩