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Article Dans Une Revue Philosophical Magazine Letters Année : 2008

Dislocation motion in silicon: the shuffle-glide controversy revisited

Résumé

Considering recently computed formation and migration energies of kinks on non-dissociated dislocations, we have compared the relative mobilities of glide partial and shuffle perfect dislocations in silicon. We found that the latter should be more mobile over all the available stress range, invalidating the model of a stress driven transition between shuffle and glide dislocations. We discuss several hypotheses that may explain the experimental observations.
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Dates et versions

hal-00418679 , version 1 (21-09-2009)

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  • HAL Id : hal-00418679 , version 1

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Laurent Pizzagalli, Pierre Beauchamp. Dislocation motion in silicon: the shuffle-glide controversy revisited. Philosophical Magazine Letters, 2008, 88 (6), pp.421. ⟨hal-00418679⟩

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