State of the art of High Temperature Power Electronics

Cyril Buttay (1, 2) , Dominique Planson (1, 2) , Bruno Allard (1, 2) , Dominique Bergogne (1, 2) , Pascal Bevilacqua (1, 2) , Charles Joubert (1) , Mihai Lazar (1, 2) , Christian Martin (1) , Hervé Morel (1, 2) , Dominique Tournier (1, 2) , Christophe Raynaud (1, 2)

1 AMPERE - Ampère
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

Mots clés: High-temperature; Silicon carbide; Power electronics

Domaines: Autre

Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩