%0 Conference Proceedings
%T AFM and Raman Studies of Graphene Exfoliated on SiC
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%+ Laboratoire des colloïdes, verres et nanomatériaux (LCVN)
%A Tiberj, Antoine
%A Martin-Fernandez, Marta
%A Camara, Nicolas
%A Poncharal, P.
%A Michel, T.
%A Sauvajol, J.-L.
%A Godignon, P.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:09-015
%( SILICON CARBIDE AND RELATED MATERIALS 2008
%B 7th European Conference on Silicon Carbide and Related Materials
%C Barcelona (SPAIN), Spain
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 615-617
%P 215-218
%8 2008-09-07
%D 2008
%K SiC
%K graphene
%K Raman
%K AFM
%Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report an investigation of few layers graphene exfoliated on SiC. Using AFM and Raman spectroscopy, we find that the graphene thickness determined from the normalized intensity of Raman lines significantly depart from the one obtained using XPS.
%G English
%L hal-00411935
%U https://hal.science/hal-00411935
%~ CNRS
%~ UNIV-MONTP2
%~ LCVN
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2