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| HAL : hal-00411877, version 1 |
| DOI : 10.1016/j.tsf.2009.04.022 |
| Fiche détaillée |  Récupérer au format |
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| Thin Solid Films 517, 20 (2009) 5940-5942 |
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| Reduction of microwave dielectric losses in KTa1−xNbxO3 thin films by MgO-doping |
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| Q. Simon 1V. Bouquet 1 |
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| (31/08/2009) |
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| KTa1 − xNbxO3 (KTN) thinfilms were grown by pulsed laser deposition on sapphire and MgO substrates. Their structural and high frequency dielectric characteristics evidenced the strong influence of the substrate and suggested possible KTN/MgO interdiffusion that could be responsible for the lower dielectriclosses obtained on this substrate. Both undoped and 6% MgO-doped KTN thinfilms were then grown on sapphire. Dielectric measurements performed at 12.5 GHz by a resonant cavity perturbation method evidenced reduction of losses by MgO-doping. Loss tangent (tan δ) was reduced by a factor of 3 in comparison with undoped films grown on sapphire. |
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| 1 : | Institut des Sciences Chimiques de Rennes |
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CNRS : UMR6226 – Université de Rennes 1 – Institut National des Sciences Appliquées (INSA) - Rennes – Ecole Nationale Supérieure de Chimie de Rennes |
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| 2 : | XLIM (XLIM) |
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CNRS : UMR6172 – Université de Limoges |
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| 3 : | School of Physics |
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University of Western Australia |
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| 4 : | Laboratoire de physique des matériaux (LPM) |
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CNRS : UMR7556 – Université Henri Poincaré - Nancy I – Institut National Polytechnique de Lorraine (INPL) |
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| MINACOM |
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| Domaine | : | Chimie/Matériaux |
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| KTN – MgO-doping – Pulsed laser deposition – Microwave devices – Thinfilms – X-ray diffraction – Scanning electron microscopy – Secondary neutral mass spectroscopy |
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| hal-00411877, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00411877 | |
| oai:hal.archives-ouvertes.fr:hal-00411877 | |
| Contributeur : Sandrine Nogues | |
| Soumis le : Lundi 31 Août 2009, 09:35:45 | |
| Dernière modification le : Mardi 16 Octobre 2012, 14:29:16 | |
