%0 Conference Proceedings
%T Electrical transport phenomena in magnesium-doped p-type GaN
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institute of High Pressure Physics [Warsaw] (IHPP)
%A Konczewicz, Leszek
%A Litwin-Staszewska, Elzbieta
%A Contreras, Sylvie
%A Piotrzkowski, Ryszard
%A Dmowski, Leslaw
%< avec comité de lecture
%Z GES:09-009
%@ 0370-1972
%J physica status solidi (b)
%( PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
%B 13th International Conference on High Pressure Semiconductor Physics (HPSP-13)
%C Fortaleza (BRAZIL), France
%I Wiley
%V 246
%N 3
%P 658-663
%8 2008-07-22
%D 2008
%K MG
%K PRESSURE
%K COMPENSATION
%K CONDUCTIVITY
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X In this paper we present the resistivity and Hall-effect measurements on p-type GaN doped with Mg. The experiments were carried out as a function of hydrostatic pressure Lip to 1200 MPa in the temperature range 260-400 K. Both bulk GaN crystals as well as GaN: Mg epilayers were studied. In the investigated samples the decrease of resistivity and increase of hole concentration under pressure was observed. Such a behavior, which is contrary to the n-type material strongly suggests a decrease of the ionization energy of Mg acceptor (E-a = 183 meV) with pressure. This shift is very weak, less than -2 meV/GPa. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
%G English
%L hal-00401355
%U https://hal.science/hal-00401355
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2