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| HAL: hal-00397725, version 1 |
| DOI: 10.1109/TNS.2006.885009 |
| Detailed view |  Export this paper |
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| IEEE Transactions on Nuclear Science 53, 6 (2006) 3449-3454 |
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| Radiation Hardened by Design RF Circuits Implemented in 0.13µm CMOS Technology |
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| W. M. Chen 1Vincent Pouget 2 |
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| (2006) |
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| Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ |
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| 1: | University of Arizona |
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University of Arizona |
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| 2: | Laboratoire de l'intégration, du matériau au système (IMS) |
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CNRS : UMR5218 – Université Sciences et Technologies - Bordeaux I – Institut Polytechnique de Bordeaux |
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| Subject | : | Engineering Sciences/Electronics |
| hal-00397725, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00397725 | |
| oai:hal.archives-ouvertes.fr:hal-00397725 | |
| From: Frédéric Darracq | |
| Submitted on: Tuesday, 23 June 2009 10:03:56 | |
| Updated on: Tuesday, 23 June 2009 10:03:56 | |
