Thermal properties of AlN-based atom chips - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue The European Physical Journal D : Atomic, molecular, optical and plasma physics Année : 2009

Thermal properties of AlN-based atom chips

Résumé

We have studied the thermal properties of atom chips consisting o high thermal conductivity Aluminum Nitride (AlN) substrates on which gold microwires are directly deposited. We have measured the heating of wires of several widths and with different thermal couplings to the copper mount holding the chip. The results are in good agreement with a theoretical model where the copper mount is treated as a heat sink and the thermal interface resistance between the wire and the substrate is vanishing. We give analytical formulas describing the different transient heating regimes and the steady state. We identify criteria to optimize the design of a chip as well as the maximal currents $I_c$ that can be fed in the wires. For a 600~$\mu$m thick-chip glued on a copper block with Epotek H77, we find $I_c=16~$A for a 3~$\mu$m high, 200~$\mu$m wide-wire.
Fichier principal
Vignette du fichier
thermiquearxiv.pdf (847.02 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00395667 , version 1 (16-06-2009)
hal-00395667 , version 2 (16-09-2009)
hal-00395667 , version 3 (17-11-2010)

Identifiants

Citer

Julien Armijo, Carlos L. Garrido Alzar, Isabelle Bouchoule. Thermal properties of AlN-based atom chips. The European Physical Journal D : Atomic, molecular, optical and plasma physics, 2009, 56, pp.33. ⟨10.1140/epjd/e2009-00275-5⟩. ⟨hal-00395667v3⟩
170 Consultations
115 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More