Deposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD

Carmen Jiménez (1) , D. de Barros (1) , A. Darraz (1) , Jean Luc Deschanvres (1) , L. Rapenne (1) , Patrick Chaudouët (1) , J.E. Mendez (1) , François Weiss (1) , M. Thomachot (2) , T. Sindzingre (2) , G. Berthomé (3) , F. J. Ferrer (4)

1 LMGP - Laboratoire des matériaux et du génie physique
2 Acxys
3 SIMaP - Science et Ingénierie des Matériaux et Procédés
4 Centro Nacional de Aceleradores

TiO2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of post-discharge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO2 films. It is shown that well-crystallised TiO2 anatase films can be obtained at a temperature of only 275°C.

Mots clés: Injection MOCVD; Atmospheric Plasma; Titanium oxide; Anatase; PECVD

Domaines: Matériaux

Carmen Jiménez, D. de Barros, A. Darraz, Jean Luc Deschanvres, L. Rapenne, et al.. Deposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD. Surface and Coatings Technology, 2008, 201, pp.8971. ⟨10.1016/j.surfcoat.2007.04.025⟩. ⟨hal-00395626⟩