%0 Journal Article
%T Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence.
%+ Institut de Photonique et d'Electronique Quantiques
%+ Groupe d'étude des semiconducteurs (GES)
%A Corfdir, P.
%A Ristic, J.
%A Lefebvre, Pierre
%A Dussaigne, Amélie
%A Martin, D.
%A Ganière, Jean-Daniel
%A Grandjean, N.
%A Deveaud-Plédran, Benoit
%Z Swiss National Science Foundation through Quantum Photonics NCCR and Project No. 119840.
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 94
%P 201115
%8 2009-05-22
%D 2009
%R 10.1063/1.3142396
%K Time-resolved cathodoluminescence
%K GaN
%K basal stacking fault
%K exciton
%K diffusion
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsJournal articles
%X Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults (BSFs)] in relation to the local density in BSFs. We describe the slow exciton capture rate on isolated BSFs by a diffusion model involving donors via a hopping process. Where BSFs are organized into bundles, we relate the shorter rise time to intra-BSF localization processes and the multiexponential decay to the type-II band alignment of BSFs in wurtzite GaN.
%G English
%L hal-00391736
%U https://hal.science/hal-00391736
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2