%0 Conference Proceedings
%T Resonantly enhanced second harmonic generation in GaN-based photonic crystal slabs
%+ Groupe d'étude des semiconducteurs (GES)
%A Torres, J.
%A Le Vassor d'Yerville, M.
%A Cassagne, D.
%A Legros, R.
%A Lascaray, J.P.
%A Centeno, E.
%A Albert, J.P.
%A Coquillat, D.
%< avec comité de lecture
%( Proceedings of PECS-VI: International Symposium on Photonic and Electromagnetic Crystal Structures
%B PECS-VI: International Symposium on Photonic and Electromagnetic Crystal Structures
%C Aghia Pelaghia, Crete, Greece
%P PECSVI/PECSVIAbstracts3/cassagne
%8 2005
%D 2005
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X There is a major interest in fabricating III-nitride photonic structures for efficient nonlinear optical processes such as second-harmonic generation because they offer fairly large non linear coefficients and high optical damage thresholds. However, the use of III-nitrides has not been possible practically due to the high dispersion and the small birefringence for phase-matching. Recently, we have shown experimentally the enhancement of second-harmonic generation in epitaxial GaN-based photonic crystals [1]. By using calculated and experimental equifrequency surfaces, it is possible to identify the geometrical configurations that will allow quasi-phase matching to be satisfied and observed experimentally in the available wavelength tuning range of the laser. The second-harmonic field generated has been measured in reflection from the surface of photonic crystals etched into a GaN layer. A very large second-harmonic enhancement is observed when simultaneously the incident beam at the fundamental frequency ω excites a resonant Bloch mode and the second-harmonic field generated is coupled into a resonant Bloch mode at 2ω.
%G English
%L hal-00390769
%U https://hal.science/hal-00390769
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2