%0 Conference Proceedings
%T Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids
%+ Groupe d'étude des semiconducteurs (GES)
%+ Dpt of Electronics & Electrical Engineering
%A Coquillat, D.
%A Le Vassor d'Yerville, M.
%A A. Boubanga Tombet, S.
%A Liu, C.
%A Bejtka, K.
%A Watson, I.M.
%A Edwards, P.R.
%A Martin, R.W.
%A Chong, H.M.H.
%A de La Rue, R.M.
%< avec comité de lecture
%@ 1610-1634
%J physica status solidi (c)
%( Physica Status Solidi C
%B 6th International Symposium on Blue Laser and Light Emitting Diodes
%C Montpellier, France
%I Wiley
%V 4
%N 1
%P 95-99
%8 2006-05-15
%D 2006
%R 10.1002/pssc.200673561
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array of flat-topped GaN micropyramids with micrometre-scale periodicity, and the other made up of sharp-tipped pyramids with sub-micrometre periodicity. Angularly resolved reflection and transmission measurements revealed the presence of sharp resonances associated with resonant Bloch modes. As a result, the photonic band structure was determined along symmetry directions of the reciprocal lattice for the two PhC structures.
%G English
%L hal-00390557
%U https://hal.science/hal-00390557
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2