%0 Conference Proceedings
%T Terahertz Plasma Wave Devices based on GaN high electron mobility transistors
%+ Groupe d'étude des semiconducteurs (GES)
%A Knap, Wojciech
%F Invité
%< avec comité de lecture
%B European Workshop on III-Nitride semiconductor Material and devices,
%C Heraklion, Greece
%8 2006
%D 2006
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%G English
%L hal-00390543
%U https://hal.science/hal-00390543
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2