%0 Conference Proceedings
%T Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
%+ Groupe d'étude des semiconducteurs (GES)
%A Eid, J.
%A Galben, I.-G.
%A Zoulis, G.
%A Robert, Teddy
%A Chaussende, D.
%A Juillaguet, Sandrine
%A Tiberj, Antoine
%A Camassel, Jean
%< avec comité de lecture
%Z GES:09-048
%( SILICON CARBIDE AND RELATED MATERIALS 2008
%B 7th European Conference on Silicon Carbide and Related Materials
%C Barcelona (SPAIN), Spain
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 615-617
%P 45-48
%8 2008-09-07
%D 2008
%K 3C-SiC
%K CF-PVT
%K KOH etching
%K N doping
%K PHYSICAL VAPOR TRANSPORT
%K SILICON-CARBIDE
%K CONTINUOUS FEED
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.
%G English
%L hal-00390466
%U https://hal.science/hal-00390466
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2