%0 Patent
%T Indium Nitride Layer production
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%A Briot, Olivier
%A Ruffenach, Sandra
%A Maleyre, B.
%A Cloitre, Thierry
%A Aulombard, R.L.
%N WO2006032756
%8 2006-03-30
%D 2006
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Patents
%G French
%L hal-00390339
%U https://hal.science/hal-00390339
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2