%0 Conference Proceedings
%T MOVPE growth of InN buffer layers on sapphire
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Ruffenach, Sandra
%A Moret, Matthieu
%A Gil, Bernard
%A Giesen, Christoph
%A Heuken, Michael
%A Rushworth, Simon
%A Leese, T.
%A Succi, Marco
%Z European Commission, SixthFrameworkProgram (STREP project ‘‘INDOT'', Contract No.NMP4-CT-2005-016956)
%< avec comité de lecture
%( Journal of Crystal Growth
%B 2nd International Symposium on the gGrowth of III-Nitrides
%C Laforet Shuzenji, Izu, Japan
%V 311
%P 2787
%8 2008-07-06
%D 2008
%R 10.1016/j.jcrysgro.2009.01.008
%K Buffer layer
%K MOCVD
%K InN
%Z PACS 81.05.Ea 81.15.Gh
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report on the MOCVD growth of InN buffer layers on sapphire substrate for InN growth. The approach used assumes that an optimized InN buffer layer has to exhibit at least the same crystalline quality and sapphire surface coverage than the GaN buffer layers allowing to grow high crystalline quality GaN on sapphire. The buffer layers were characterized by AFM and GID measurements. Sapphire nitridation was investigated: it has a strong influence on in-plane crystalline quality. Two kinds of buffer layers were optimized according to the GaN buffer layer specifications: one of them only presented In droplets at its surface. It was shown that the small amount of In droplets increases the adatoms mobility of the main layer overgrown, leading to a 25% decrease of its in-plane mosaicity, compared to InN films directly grown on sapphire. To achieve a same improvement on InN buffer layer free of In droplets, the InN main layer growth temperature had to be increased from 550 °C. to 600 °C.
%G English
%L hal-00390306
%U https://hal.science/hal-00390306
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2