%0 Journal Article
%T Selectively excited photoluminescence from Eu-implanted GaN
%+ Groupe d'étude des semiconducteurs (GES)
%A Wang, K.
%A Martin, Rw
%A O'Donnell, Kp
%A Katchkanov, V.
%A Nogales, E.
%A Lorenz, K.
%A Alves, E.
%A Ruffenach, Sandra
%A Briot, Olivier
%< avec comité de lecture
%Z GES:05-026
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 87
%N 11
%P 112107
%8 2005
%D 2005
%R 10.1063/1.2045551
%K EARTH-DOPED GAN
%K GROWTH
%K ER
%K ELECTROLUMINESCENCE
%K EMISSION
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 degrees C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to D-5(0)-F-7(2) (similar to 622 nm), D-5(0)-F-7(3) (similar to 664 nm), and D-5(0)-F-7(1) (similar to 602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the D-5(0)-F-7(2) multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at similar to 385 nm. Marked differences in the shape of the D-5(0)-F-7(2) PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms. (c) 2005 American Institute of Physics.
%G English
%L hal-00390133
%U https://hal.science/hal-00390133
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ TEST3-HALCNRS