%0 Journal Article
%T Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
%+ Groupe d'étude des semiconducteurs (GES)
%A Lozano, Jg
%A Sanchez, Am
%A Garcia, R.
%A Gonzalez, D.
%A Araujo, D.
%A Ruffenach, Sandra
%A Briot, Olivier
%< avec comité de lecture
%Z GES:05-025
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 87
%N 26
%P 263104
%8 2005
%D 2005
%R 10.1063/1.2152110
%K MOLECULAR-BEAM EPITAXY
%K THREADING DISLOCATIONS
%K GROWTH
%K STRAIN
%K FILMS
%K SEPARATION
%K GAN(0001)
%K MOVPE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X InN quantum dots (QDs) on GaN (0001) grown by metalorganic vapor phase epitaxy onto a sapphire substrate were studied by transmission electron microscopy (TEM). We found that the nucleation of InN QDs on GaN is directly related to the presence of threading dislocations (TDs) in the center of the QDs. The TEM analysis revealed that the TDs finish at the InN/GaN interface and they are pure edge dislocations. Therefore, spiral growth models cannot explain nucleation of these QDs. Although controlling edge TDs constitute a possible approach to determine the QD density, a better approach may be an increase in the material growth rate in order to enter the diffusion-limited growth mode, where growth is not sensitive to surface heterogeneities. (c) 2005 American Institute of Physics.
%G English
%L hal-00390132
%U https://hal.science/hal-00390132
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2