%0 Conference Proceedings
%T Growth and properties of Indium nitride thin films and InN nanostructures
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Ruffenach, Sandra
%A Gil, Bernard
%< avec comité de lecture
%Z GES:05-024
%( 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS)
%B 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society
%C Sydney (AUSTRALIA), Australia
%I IEEE SERVICE CENTER, 445 HOES LANE, PO BOX 1331, PISCATAWAY, NJ 08855-1331 USA
%3 IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
%P 856-857
%8 2005-10-22
%D 2005
%K InN
%K MOCVD
%K Epitaxy
%K defects
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X The growth of indium nitride quantum dots are studied. An investigation of the dot built-in strain, at the nanometric scale, performed using the synchrotron radiation is presented. These results are correlated with transmission electron microscopy images showing the dot structure. From these results, together with a thermodynamical analysis, it is shown that the dot growth mechanism is not the usual Stranski-Krastanov growth mode, but is more related to the BCF (Burton Cabrera Franck) growth mode.
%G English
%L hal-00390131
%U https://hal.science/hal-00390131
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2