%0 Journal Article
%T An evaluation of the growth of nitrides on semipolar substrates using two indicators
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA)
%A Gil, Bernard
%A Bigenwald, Pierre
%A Briot, Olivier
%< avec comité de lecture
%Z GES:07-044
%@ 1862-6254
%J physica status solidi (RRL) - Rapid Research Letters
%I Wiley-VCH Verlag
%V 1
%N 6
%P 268-270
%8 2007
%D 2007
%R 10.1002/pssr.200701208
%K LIGHT-EMITTING-DIODES
%K QUANTUM-WELLS
%K NONPOLAR
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We evaluate the properties of nitride heterostructures on semipolar substrates using two indicators: the cancellation of the Quantum Confined Stark Effect and the volume density of elastic energy stored in the strained layers of GaN-GaInN heterostructures lattice-matched to (hkl)-oriented GaN semipolar substrates. These two parameters indicate that the growth on specific orientations is a plus when compared to growth on (0001) polar substrates. We will show that, unfortunately, one cannot simultaneously minimize the stored elastic energy and cancel the Quantum Confined Stark Effect, but it is possible to significantly reduce both of them. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
%G English
%L hal-00390129
%U https://hal.science/hal-00390129
%~ PRES_CLERMONT
%~ CNRS
%~ UNIV-BPCLERMONT
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2