%0 Conference Paper
%F Oral 
%T Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.
%+ Institut de Photonique et d'Electronique Quantiques
%+ Groupe d'étude des semiconducteurs (GES)
%+ Departamento de Ingeniería Electrónica and ISOM
%A Corfdir, P.
%A Ristic, J.
%A Lefebvre, Pierre
%A Calleja, E.
%A Ganière, Jean-Daniel
%A Deveaud-Plédran, Benoit
%Z oral
%< avec comité de lecture
%B International Workshop on Nitride Semiconductors – IWN08
%C Montreux, Switzerland
%8 2008-10-06
%D 2008
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%G English
%L hal-00390010
%U https://hal.science/hal-00390010
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2