%0 Journal Article
%T Optical properties of GaN/AlN quantum dots
%+ Groupe d'étude des semiconducteurs (GES)
%+ Nanophysique et Semiconducteurs (NPSC)
%A Lefebvre, Pierre
%A Gayral, B.
%Z ACI BUGATI
%Z article de revue
%< avec comité de lecture
%@ 1631-0705
%J Comptes Rendus. Physique
%I Académie des sciences (Paris)
%V 9
%P 816
%8 2008-11-13
%D 2008
%R 10.1016/j.crhy.2008.10.008
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These systems show unusually large exciton binding energies and band-offsets. Moreover, when grown along the (0001) axis in the wurtzite phase, the optical properties are dominated by huge on-axis internal electric fields, leading to a very low oscillator strength and complex dynamical behavior. It is also possible to grow GaN quantum dots in the cubic phase or along nonpolar axis of the wurtzite cell. We discuss properties of ensembles of quantum dots, as well as of single quantum dots studied by micro-photoluminescence.
%G English
%L hal-00389996
%U https://hal.science/hal-00389996
%~ CEA
%~ UGA
%~ CNRS
%~ UNIV-MONTP2
%~ INPG
%~ GES
%~ INAC-SP2M
%~ DSM-INAC
%~ UNIV-MONTPELLIER
%~ CEA-DRF
%~ IRIG
%~ CEA-GRE
%~ UM1-UM2