%0 Journal Article
%T Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers
%+ Groupe d'étude des semiconducteurs (GES)
%+ School of Electrical and Computer Engineering - Georgia Insitute of Technology (ECE GeorgiaTech)
%A Seguin, Robert
%A Guillet, Thierry
%A Taliercio, T.
%A Lefebvre, P.
%A Bretagnon, T.
%A Zhang, X.B.
%A Ryou, J.-H.
%A Dupuis, R.D.
%< avec comité de lecture
%@ 1286-0042
%J European Physical Journal: Applied Physics
%I EDP Sciences
%V 37
%P 15
%8 2007-01-26
%D 2007
%R 10.1051/epjap:2007006
%Z PACS : 78.67.Hc ; 78.47.+p ; 78.55.Cr
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X We report continuous wave and time resolved photoluminescence studies of self-assembled InP quantum dots grown by metalorganic chemical vapor deposition. The quantum dots are embedded into indirect band-gap In0.5Al0.5P layers or In0.5Al0.3Ga0.2P layers with a conduction band line-up close to the direct-to-indirect crossover. As revealed by photoluminescence spectra, efficient interdiffusion of species from the barrier layers produces (Al,In)P or (Al,Ga,In)P-dots. This interdiffusion creates potential barriers that are repulsive for electrons of X valleys around the QDs. Both samples show a fast exponential decay component with a time constant between 0.5 and 0.7 ns. In addition, the sample with indirect band gap matrix shows a slow non-exponential time-decay, which is still visible after more than 100 µs. The fast component is attributed to direct recombination of electron-hole pairs in the dots whilst the slow component, which follows a power law t^-0.75 results from recombination of holes in the dots and electrons in metastable states around the dots.
%G English
%L hal-00389970
%U https://hal.science/hal-00389970
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2