%0 Conference Proceedings
%T Modeling the infrared reflectance of n-/n+ SiC layers on top of n+ SiC substrates for epitaxy control application
%+ Groupe d'étude des semiconducteurs (GES)
%A Camassel, Jean
%A Pernot, Julien
%A Wang, H. Y.
%A Peyre, Hervé
%< avec comité de lecture
%( Physica status solidi. A. Applied research
%B EXMATEC'02 International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies No6
%C Budapest, Hungary
%I Wiley-VCH, Berlin, ALLEMAGNE
%V 195
%N 1
%P 38-43
%8 2002-05-26
%D 2002
%R 10.1002/pssa.200306265
%K Inorganic compounds
%K Binary compounds
%K Thin films
%K Silicon carbides
%K Thickness
%K Interference
%K Buffer layer
%K Doping
%K Schottky barriers
%K Theoretical study
%K Active layer
%K Epitaxy
%K Reflection spectrum
%K Infrared spectra
%K Modelling
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Infrared reflectance is a powerful tool to control, rapidly and non-destructively, complex active layer stacks for electronic devices applications. The case of interest which is considered in this work concerns 4H-SiC Schottky diode structures. They are made of a lightly doped layer (drift zone, 5 x 1015 cm-3) on top of a heavily doped n+ substrate (5 x 1018 cm-3). In between is a thin (buried) SiC layer used as field stop (or buffer). From model calculations performed in the range 1000-4000 cm-1, we show that the shape of the interference spectra is very sensitive to the doping and thickness of the buried (buffer) layer.
%G English
%L hal-00389902
%U https://hal.science/hal-00389902
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2