%0 Conference Proceedings
%T Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls”
%+ NOVASiC
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Groupe d'étude des semiconducteurs (GES)
%A Chassagne, Thierry
%A Leycuras, André
%A Balloud, Carole
%A Arcade, Philippe
%A Peyre, Hervé
%A Juillaguet, Sandrine
%< avec comité de lecture
%( Materials Science Forum
%B 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003)
%C Lyon, France
%I Trans Tech Publications, Switzerland
%V 457-460
%P 273-276
%8 2003-10-05
%D 2003
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%G English
%L hal-00389899
%U https://hal.science/hal-00389899
%~ UNICE
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM1-UM2