%0 Conference Proceedings
%T From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer Stacks
%+ Groupe d'étude des semiconducteurs (GES)
%A Pernot, Julien
%A Camassel, Jean
%A Peyre, Hervé
%A Contreras, Sylvie
%A Robert, Jean-Louis
%< avec comité de lecture
%( Materials Science Forum
%B European Conference on Silicon Carbide and Related Materials (ECSCRM2002)
%C Linköping, Sweden
%I Trans Tech Publications, Switzerland
%V 433-436
%P 403-406
%8 2002-09-01
%D 2002
%K Infrared reflectivity
%K plasma frequency
%K Hall effect
%K mobility
%K resistivity and doping level.
%K resistivity and doping level
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X To model the infrared reflectance spectrum of a conductive multiple layer stack, one needs the plasma frequency and damping parameter of every constitutive material. In this work we show how they can be linked to the resistivity or doping level of the different layers. From a typical application performed in the case of Schottky diode structures, we find that between 1000 and 4000 cm-1, the interference shape of the resulting infrared spectrum is mostly sensitive to the doping level and thickness of the buried buffer layer.
%G English
%L hal-00389889
%U https://hal.science/hal-00389889
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2