%0 Conference Proceedings
%T SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-ion Implantation up to x=0.2
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institut für Festkörperelektronick
%+ Institute of Ion Beam Physics and Materials Research
%A Peyre, Hervé
%A Pezoldt, Joerg
%A Voelskow, M.
%A Skorupa, W.
%A Camassel, Jean
%< avec comité de lecture
%( Materials Science Forum
%B 7th European Conference on Silicon Carbide and Related Materials
%C France
%I Trans Tech Publications, Switzerland
%V 615-617
%P 465-468
%8 2008-09-07
%D 2008
%K SIMS
%K ion implantation
%K solid solution
%K germanium
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth distribution and measurement results have been determined. It is found that the MCs+ SIMS technique is best suited to investigate Gex(4H-SiC)1-x solid solutions up to x=0.2, while the O2 + SIMS configuration is limited to x=0.1. The Ge concentrations obtained by SIMS are very close to the nominal values. On the opposite, performing a comparison with previous RBS data, we find that the RBS values are systematically underestimated by ~30%. Finally, at very high dose, we find that some of the implanted species are lost by recoil and sputtering effects.
%G English
%L hal-00389410
%U https://hal.science/hal-00389410
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2