%0 Conference Proceedings
%T Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
%+ Groupe d'étude des semiconducteurs (GES)
%A Oehlschlaeger, Felix
%A Juillaguet, Sandrine
%A Peyre, Herve
%A Calmassel, Jean
%A Wellmann, Peter, J.
%< avec comité de lecture
%Z GES:09-035
%( SILICON CARBIDE AND RELATED MATERIALS 2008
%B 7th European Conference on Silicon Carbide and Related Materials
%C Barcelona (SPAIN), Spain
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 615-617
%P 259-262
%8 2008-09-07
%D 2008
%K photoluminescence-topography
%K PL
%K mapping
%K absorption measurement
%K determination of doping inhomogeneity
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following, work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2" at room- and low temperature in a non-destructive way.
%G English
%L hal-00389394
%U https://hal.science/hal-00389394
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2