%0 Conference Proceedings
%T Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC
%+ Groupe d'étude des semiconducteurs (GES)
%A Zielinski, M.
%A Portail, M.
%A Chassagne, T.
%A Juillaguet, Sandrine
%A Peyre, Herve
%A Leycuras, A.
%A Camassel, Jean
%< avec comité de lecture
%Z GES:09-034
%( SILICON CARBIDE AND RELATED MATERIALS 2008
%B 7th European Conference on Silicon Carbide and Related Materials
%C Barcelona (SPAIN), Spain
%I TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
%V 615-617
%P 49-52
%8 2008-09-07
%D 2008
%K 3C-SiC
%K Liquid Phase Epitaxy
%K bulk Si wafer conversion
%K EPITAXIAL-GROWTH
%K FILMS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented "crucibles", the elaboration of crack-free (111) "crucibles" and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100 mu m thick 3C-SiC(100) as well as 30 mu m thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100 mu m/h and locally can even reach similar to 1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.
%G English
%L hal-00389376
%U https://hal.science/hal-00389376
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2