%0 Journal Article
%T Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation
%+ University of Pretoria [South Africa]
%+ Groupe d'étude des semiconducteurs (GES)
%A Brink, D. J.
%A Peyre, H.
%A Camassel, J.
%Z One of us (D.J.B.) also acknowledges CNRS and NRF for supporting grants during his stays in Montpellier
%Z Funding-Acknowledgement = CNM Barcelona (Spain) ; Franck Torregrossa from IBS-Rousset (France) Funding-Text = We greatly thank Philippe Godignon from CNM Barcelona (Spain) and Franck Torregrossa from IBS-Rousset (France) for providing us with the implanted samples investigated in this work. We also acknowledge Pierre Valvin and Philippe Arcade from GES for expert assistance with the irradiation and measurement procedures. Finally we acknowledge Marcin Zielinski and Servane Blanque from GES for performing SIMS and Raman measurements. One of us (D.J.B.) also acknowledges the CNRS and NRF for supporting grants during his stays in Montpellier
%< avec comité de lecture
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 105
%N 6
%P 12
%8 2009
%D 2009
%R 10.1063/1.3098226
%K aluminium
%K annealing
%K high-temperature effects
%K ion implantation
%K nitrogen
%K radiation effects
%K silicon compounds
%K wide band gap semiconductors
%K Keywords-Plus = PULSED EXCIMER-LASER
%K INFRARED REFLECTANCE SPECTROSCOPY
%K SILICON-CARBIDE
%K ELECTRICAL ACTIVATION
%K PHASE-CHANGE
%K DAMAGE
%K ALUMINUM
%K AMORPHIZATION
%K KINETICS
%K RECRYSTALLIZATION
%Z Physics, Applied
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report on a quantitative analysis of the effect of visible light laser irradiation (VLLI) on hexagonal (alpha) silicon carbide implanted with nitrogen and aluminum. In both cases of 4H and 6H polytypes we show that a short, but intense, irradiation with the 532 nm wavelength of a frequency-doubled neodymium: ytterbium aluminum garnet (Nd:YAG) laser results in a substantial reduction in the damage level produced by room temperature ion implantation. Up to now the recovery could not be made complete but, in the best conditions, it could reach similar to 80\% of the initial damage value. This is not enough to qualify VLLI as a full activation step but, rather, suggests to use it as a new processing tool in order to lower the constraints of high temperature ion implantation or, after implantation performed at room temperature, to reduce the total budget for high temperature annealing and activation steps.
%G English
%Z CNRS-NRF collaboration
%L hal-00389278
%U https://hal.science/hal-00389278
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2