%0 Journal Article
%T Finite element modeling for temperature stabilization of gated Hall sensors
%+ Groupe d'étude des semiconducteurs (GES)
%+ ITRON SAS
%A Jouault, Benoit
%A Bouguen, L.
%A Contreras, Sylvie
%A Kerlain, A.
%A Mosser, Vincent
%< avec comité de lecture
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 104
%N 5
%P 053705
%8 2008
%D 2008
%R 10.1063/1.2968436
%K finite element analysis
%K Hall effect transducers
%K voltage measurement
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Using finite element analysis, we have calculated the Hall voltage of gated Hall sensors in the temperature range (−55 °C, 125 °C). We investigated how both the sensor shape and the external connections influence the Hall voltage and its thermal drift. The numerical results are in excellent agreement with the experimental measurements. By contrast, we checked that simplified analytical methods lead to a large numerical error, which is not acceptable in these sensors devoted to metrological applications. In particular, it is found that the thermal drift in the Hall voltage can be canceled for a current of the order of 300 µA, a much higher value than that predicted by the corresponding analytical calculations.
%G English
%2 https://hal.science/hal-00388502/document
%2 https://hal.science/hal-00388502/file/report_v12.pdf
%L hal-00388502
%U https://hal.science/hal-00388502
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2