New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process

Isabelle Bertrand (1) , Vasanta Pathirana (2) , Éric Imbernon (3) , Florin Udrea (2) , Marise Bafleur (4) , Ranick Ng (2) , Hugues Granier (3) , Bernard Rousset (3) , Jean-Marie Dilhac (4)

1 Freescale Semiconducteurs
2 CAM - University of Cambridge [UK]
3 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
4 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

In this paper, we present new lateral DMOS and IGBT structures based on a partial SOI substrate. The partial SOI substrate, formed through LEGO recrystallization process improves considerably the breakdown capability and the thermal behavior of these devices compared to full SOI devices. Experimental results of high voltage power devices implemented on such a process are presented for the first time.

Mots clés: Partial SOI; LIGBT; LEGO; LDMOS

Domaines: Micro et nanotechnologies/Microélectronique

Isabelle Bertrand, Vasanta Pathirana, Éric Imbernon, Florin Udrea, Marise Bafleur, et al.. New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM2005), Oct 2005, Santa Barbara, United States. pp.74-77. ⟨hal-00385958⟩