%0 Journal Article
%T Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field
%+ Laboratoire de Physique Théorique et Astroparticules (LPTA)
%A Boubanga-Tombet, S.
%A Sakowicz, M.
%A Coquillat, D.
%A Teppe, F.
%A Knap, W.
%A Dyakonov, Michel
%A Karpierz, K.
%A Lusakowski, J.
%A Grynberg, M.
%< avec comité de lecture
%Z 09-023
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 95
%N 7
%P 072106
%8 2009-08-19
%D 2009
%Z 0904.2081
%R 10.1063/1.3207886
%K aluminium compounds
%K cyclotron resonance
%K field effect transistors
%K gallium arsenide
%K III-V semiconductors
%K indium compounds
%K photodetectors
%K plasma waves
%K Shubnikov-de Haas effect
%K terahertz wave detectors
%Z PACS: 07.57.Kp, 85.60.Gz, 84.40.-x, 85.30.Tv
%Z Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]Journal articles
%X We report on terahertz radiation detection with InGaAs/InAlAs Field EffectTransistors in quantizing magnetic field. The photovoltaic detection signal isinvestigated at 4.2 K as a function of the gate voltage and magnetic field.Oscillations analogous to the Shubnikov-de Haas oscillations, as well as theirstrong enhancement at the cyclotron resonance, are observed. The results arequantitatively described by a recent theory, showing that the detection is dueto rectification of the terahertz radiation by plasma waves relatednonlinearities in the gated part of the channel.
%G English
%L hal-00378543
%U https://hal.science/hal-00378543
%~ IN2P3
%~ LPTA
%~ CNRS
%~ UNIV-MONTP2
%~ UNIV-MONTPELLIER
%~ UM1-UM2