Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

Pierre Brosselard (1, 2) , Nicolas Camara (2) , Viorel Banu (2) , Xavier Jordà (2) , Miquel Vellvehi (2) , Philippe Godignon (2) , José del R. Millán (2)

1 AMPERE - Ampère
2 CNM - Centro Nacional de Microelectronica [Spain]

4H-SiC Junction Barrier Schottky (JBS) diodes (1.2 and 3.5 kV) have been processed using the same technology with two different layouts. From 4 A and for the whole temperature range, the 3.5-kV diodes exhibit a bipolar conduction independent of the layout. However, the behavior of the 1.2-kV diodes depends on the design. At 500 V-300°C, the leakage current is only 100 nA and 10 µA for the 3.5- and 1.2-kV diodes, respectively. The switch-off performances show a reverse peak current of only 50% of the nominal current at 300°C for all JBS diodes. The JBS diodes have a surge current capability of around 80 A, two times higher than the Schottky diodes. DC electrical stresses are performed during 50 h, and all the 1.2-kV diodes exhibit no bipolar degradation. Nevertheless, some slight bipolar degradation is observed in 3.5-kV JBS diodes. Electroluminescence measurements exhibit the expansion of stacking faults in 3.5-kV diodes unlike in 1.2-kV diodes.

Mots clés: Junction Barrier Schottky (JBS); merged p-i-n Schottky; rectifier; reverse recovery; Schottky; silicon carbide (SiC); surge current; ultrafast diodes

Domaines: Energie électrique

Pierre Brosselard, Nicolas Camara, Viorel Banu, Xavier Jordà, Miquel Vellvehi, et al.. Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes. IEEE Transactions on Electron Devices, 2008, 55 (8), pp.1847 - 1856. ⟨10.1109/TED.2008.926636⟩. ⟨hal-00369497⟩