 |
|
|
|
| HAL : hal-00367157, version 1 |
| Fiche détaillée |  Récupérer au format |
|
|
| 11th Int. Conf. on the Formation of Semiconductor Interfaces (ICFSI'07), , Brazil, Manaus : Brésil (2007) |
|
|
|
|
| AlGaN/GaN heterostructure based surface acoustic wave structures for chemical sensors |
|
|
| T. Lalinsky 1L. Rufer 2 |
|
|
| (19/08/2007) |
|
|
|
| We present a new approach in forming interdigital surface acoustic wave (SAW) structures on AlGaN/GaN heterostructure to be applied in chemical sensors technology. This approach uses a selective self-aligned SF6 plasma treatment of the AlGaN/GaN barrier layer to modify 2DEG density thus enabling the redistribution of the E-field and the reduction of the peak field in the range of SAW structures. The initial results in the process technology and characterization are presented for the first time. |
|
|
|
|
|
|
|
|
|
|
|
| 1 : | Institute of Electrical Engineering |
|
|
|
Slovak Academy of Sciences |
|
|
| 2 : | Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA) |
|
|
|
CNRS : UMR5159 – Université Joseph Fourier - Grenoble I – Institut National Polytechnique de Grenoble (INPG) |
|
|
| 3 : | Institute of Electrical Engineering, SAS Bratislava |
|
|
|
Institute of Electrical Engineering, SAS Bratislava |
|
|
|
|
|
|
|
|
|
| Domaine | : | Sciences de l'ingénieur/Micro et nanotechnologies/Microélectronique |
|
|
| AlGaN/GaN – chemical sensors |
|
| hal-00367157, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00367157 | |
| oai:hal.archives-ouvertes.fr:hal-00367157 | |
| Contributeur : Lucie Torella | |
| Soumis le : Mardi 10 Mars 2009, 14:57:36 | |
| Dernière modification le : Mardi 10 Mars 2009, 14:57:36 | |
