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| HAL : hal-00358834, version 1 |
| DOI : 10.1002/jnm.646 |
| Fiche détaillée |  Récupérer au format |
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| International Journal of Numerical Modelling Electronic Networks Devices and Fields 20, 6 (2007) 283-297 |
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| A novel approach to extract accurate design parameters of PiN diode |
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| Tarek Ben Salah 1, 2Sami Ghedira 2 |
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| (11/2007) |
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| Accurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (IRM, VRM and trr). With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained. |
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| 1 : | Ampère |
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CNRS : UMR5005 – Université Claude Bernard - Lyon I – Institut National des Sciences Appliquées (INSA) - Lyon – Ecole Centrale de Lyon |
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| 2 : | LMI, Faculty of Sciences of Monastir |
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Faculty of Sciences of Monastir |
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| Domaine | : | Sciences de l'ingénieur/Energie électrique |
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| numerical modelling – parameter extraction – PiN diode – circuit simulation |
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| hal-00358834, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00358834 | |
| oai:hal.archives-ouvertes.fr:hal-00358834 | |
| Contributeur : Publications Ampère | |
| Soumis le : Mercredi 4 Février 2009, 15:51:16 | |
| Dernière modification le : Mercredi 18 Mars 2009, 18:06:54 | |
