%0 Journal Article
%T From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2)
%A Taliercio, T.
%A Intartaglia, R.
%A Gil, B.
%A Lefèbvre, P.
%A Bretagnon, T.
%A Tisch, U.
%A Finkman, E.
%A Salzman, J.
%A Pinault, M.-A.
%A Laügt, M.
%A Tournié, E.
%< avec comité de lecture
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 69
%N 7
%P 073303.1-073303.4
%8 2004
%D 2004
%R 10.1103/PhysRevB.69.073303
%Z Engineering Sciences [physics]/ElectronicsJournal articles
%X The composition dependence of the band-gap reduction of GaAs1-xNx grown by molecular beam epitaxy and metal organic vapor phase epitaxy was investigated using transmission, reflection, and low-temperature photoluminescence (PL) spectroscopy for N incorporations ranging from doping concentrations up to x=5 × 10-2. We identified four different regimes of N incorporation with distinctly different band-gap scaling. N-doped GaAs shows sharp PL lines due to N cluster states, but no significant change in the band gap. In the ultradilute region (10-5≤x≤ 1.5 × 10-3) a strong band-gap reduction was observed which scales according to x, irrespective of the local distribution of N atoms in the As sublattice. The same band-gap scaling was observed for ultradilute InGaAsN after corrections for strain and In alloying. In an intermediate compositional region (1.5 × 10-3≤x≤2.5×10-2) ΔEg scales according to x2/3. At higher concentrations (x>2.5 × 10-2) ΔEg weakens due to effects connected with N oversaturation of the As sublattice.
%G English
%L hal-00330627
%U https://hal.science/hal-00330627
%~ CNRS
%~ UNIV-MONTP2
%~ IES
%~ GES
%~ UNIV-MONTPELLIER
%~ CEM2
%~ UM1-UM2