%0 Journal Article
%T High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2)
%A Dyakonova, N.
%A Rumyantsev, S.
%A Shur, M.S.
%A Meziani, M.
%A Pascal, F.
%A Hoffmann, A.
%A Fareed, Q.
%A Bilenko, Yu.
%A Gaska, R.
%A Knap, W.
%< avec comité de lecture
%@ 0031-8965
%J physica status solidi (a)
%I Wiley
%V 202
%N 4
%P 677-679
%8 2005
%D 2005
%R 10.1002/pssa.200460472
%Z Engineering Sciences [physics]/ElectronicsJournal articles
%X The influence of strong magnetic field on the 1/f noise in AlGaN/GaN metal-oxide-Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/f noise on the magnetic fields up to 10 T where the strong geometric magneto-resistance has been observed, shows that the carrier number fluctuations is the dominant mechanism of the noise in these devices.
%G English
%L hal-00328659
%U https://hal.science/hal-00328659
%~ CNRS
%~ UNIV-MONTP2
%~ IES
%~ GES
%~ UNIV-MONTPELLIER
%~ CEM2
%~ UM1-UM2