A 60GHz, 13dBm Fully Integrated 65nm RF-CMOS Power Amplifier

Sofiane Aloui (1) , Eric Kerherve (1) , Didier Belot (2) , Robert Plana (3)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 ST-CROLLES - STMicroelectronics [Crolles]
3 LAAS-MINC - Équipe MIcro et Nanosystèmes pour les Communications sans fil

A 65nm CMOS, 60GHz fully integrated power amplifier (PA) from STMicroelectronics has been designed for low cost Wireless Personal Area Network (WPAN). It has been optimized to deliver the maximum linear output power (OCP1) without using parallel amplification topology. The simulated OCP1 is equal to 8.9 dBm with a gain of 8dB. To obtain good performances and consume an ultra compact area of silicon, the PA has been matched and optimized with a mixed technique, using lumped and distributed elements. The chip size is 0.48mm*0.6mm including pads

Mots clés: 65nm CMOS; 60GHz; power amplifier (PA); WPAN

Domaines: Micro et nanotechnologies/Microélectronique

Sofiane Aloui, Eric Kerherve, Didier Belot, Robert Plana. A 60GHz, 13dBm Fully Integrated 65nm RF-CMOS Power Amplifier. Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008, Jun 2008, Montreal, Canada. ⟨hal-00326811⟩