A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation

Adel Benmansour (1) , Stephane Azzopardi (1) , Jean-Christophe Martin (1) , Eric Woirgard (1)

1 IMS - Laboratoire de l'intégration, du matériau au système

A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify if the failure mechanism is due to a breakdown, a latchup or a thermal runaway phenomenon.

Domaines: Energie électrique

Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard. A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation. Microelectronics Reliability, 2007, vol.47, pp.1800-1805. ⟨hal-00324010⟩