Integrated RF MEMS/CMOS Devices

R. R. Mansour (1) , S. Fouladi (1) , M. Bakeri-Kassem (1)

1 University of Waterloo [Waterloo]

A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS parallel-plate capacitors with a high quality factor and a very compact size. Simulations and measured results are presented for several MEMS/CMOS capacitors. A 2-pole coupled line tunable bandpass filter with a center frequency of 9.5 GHz is designed, fabricated and tested. A tuning range of 17% is achieved using integrated variable MEMS/CMOS capacitors with a quality factor exceeding 20. The tunable filter occupies a chip area of 1.2 x 2.1 mm2.

Domaines: Autre [cs.OH]

R. R. Mansour, S. Fouladi, M. Bakeri-Kassem. Integrated RF MEMS/CMOS Devices. DTIP 2008, Apr 2008, Nice, France. pp.374-375. ⟨hal-00277744⟩