%0 Journal Article
%T Room-temperature Terahertz Emission from Nanometer Field Effect Transistors
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire de Physique Théorique et Astroparticules (LPTA)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%A Dyakonova, N.
%A Dyakonov, Michel
%A El Fatimy, A.
%A Lusakowski, J.
%A Knap, W.
%A Poisson, M.-A.
%A Morvan, E.
%A Bollaert, S.
%A Shchepetov, A.
%A Roelens, Yannick
%A Gaquière, Christophe
%A Theron, D.
%A Cappy, A.
%< avec comité de lecture
%Z 06-068; 06-068
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 88
%N 14
%P 141906
%8 2006
%D 2006
%R 10.1063/1.2191421
%K ndium compounds
%K aluminium compounds
%K gallium compounds
%K gallium arsenide
%K III-V semiconductors
%K wide band gap semiconductors
%K high electron mobility transistors
%K submillimetre wave transistors
%K submillimetre wave generation PACS: 85.30.Tv
%K 84.40.-x
%Z 85.30.Tv – 84.40.-x
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 µW.
%G English
%L hal-00264792
%U https://hal.science/hal-00264792
%~ IN2P3
%~ LPTA
%~ CNRS
%~ UNIV-VALENCIENNES
%~ UNIV-MONTP2
%~ IEMN
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-LILLE
%~ UM1-UM2
%~ TEST-UPHF